Preparation of CdxInxS nanocomposite film by electron beam deposition

Abstract

Cadmium sulfide (CdS) films were prepared by electron beam evaporation on glass substrates at room-temperature, doped with indium (In) and annealing at different temperatures for two hours under vacuum. Structural and electrical properties were studied by X-ray diffraction (XRD), d.c. conductivity and Hall effect. XRD shows transformation of CdS into CdxInxS. The conductivity of CdS at 300 K was found to be 0.288 and 0.215 (Ω.cm)-1 corresponding to the thickness 0.5 and 1 μm. The conductivity of 1 μm thickness of CdS doped with indium and heat treatment at 473, 523, 573 and 623 K were 12.18, 3.32, 2.74 and 2.82 (Ω.cm)-1 respectively. The activation energy was 0.24, 0.3, 0.63 and 0.52 eV for the same temperature ranges. The results show that possibility to fabricate high quality films of CdxInxS by thermal diffusion doping.