Simulation Analysis of CMOS Device Fabrication Using Silvaco TCAD: Process Optimization for Biomedical Applications

Abstract

This paper describes a detailed simulation of CMOS device manufacturing using Silvaco TCAD software. The simulated CMOS devices reached the final source/drain doping density of about 7x10¹⁹ cm^-3 in both NMOS and PMOS devices, and the threshold voltage of about ±1 V, which can be used in many logic applications. N-well and P-well pre-annealing concentrations were 2x10¹⁷ cm^-3 and 6x10¹⁷ cm^-3 respectively with post drive-in diffusion depths of 2-3 μm. The LOCOS process was able to generate 0.5 μm field oxide to isolate devices. This paper offers specific information on process parameter selection and optimization and shows that process simulation is valuable in exhibiting fabrication-device characteristic relations. Moreover, the paper explains the CMOS fabrication infrastructure in biomedical sensor applications, in which CMOS technology has demonstrated notable potential biosensors, point-of-care diagnostics, and implantable medical devices.