Spectral Gain-Carrier Density Distribution of SQW GaAs/AlGaAs Laser

Authors

  • Adawiya J. Haider
  • Safaa A. Oudah Al-Qaysi
  • Awatif Sabir Jassam

DOI:

https://doi.org/10.31185/jwsm.128

Keywords:

SQW GaAs/AlGaAs laser, Modal gain, Spectral gain

Abstract

In this work, the modal gain of SQW GaAs/AlGaAs has been calculated using the Fermi-Golden Rule with varying the quantum well thickness Lz =(100,75) Ǻ, at a temperature of T=300oK, at a bandgap discontinuity of ΔEc of 0.1 eV , this calculation was achieved using two models, the simplified and the polarization enhancement model at a carrier injection condition of N=3.348*1018 cm-3.

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Published

2022-11-08

Issue

Vol. 4 No. 1 (2011)

Section

Articles

License

Copyright (c) 2011 Adawiya J. Haider, Safaa A. Oudah Al-Qaysi, Awatif Sabir Jassam

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

Adawiya J. Haider, Al-Qaysi, S. A. O. ., & Awatif Sabir Jassam. (2022). Spectral Gain-Carrier Density Distribution of SQW GaAs/AlGaAs Laser. Journal of Wasit for Science and Medicine, 4(1), 1-9. https://doi.org/10.31185/jwsm.128