Electron transport mechanism of SnIn/c-Si Solar cell

Abstract

In this research was fabricated SnIn/c-Si Hetrojunction Solar Cell, where SnIn/c-Si heterojunction Solar Cell fabricated by deposition of SnIn film with thickness 500 nm on c-Si by using thermal evaporation. Electrical properties of SnIn thin film include d.c conductivity and Hall effect at different annealing temperature. From d.c conductivity found the electrical activation energies Ea1 and Ea2 increase with increasing of annealing temperature from 323K to 348K. From I-V characteristics, measurements efficiency of the found increasing from (1.5 to 4.67)% with increasing of annealing temperature.