Low temperature epitaxial graphene on 3C-SiC surface induced by carbon evaporation

Abstract

With the carbon bombardment, the procedure of producing graphene on SiC surfaces is modified. The carbon evaporation influences the dynamical growth of graphene on the hexagonal SiC. The epitaxial graphene induced by carbon evaporation is obtained at lower annealing temperatures of about 950 oC in case of SiC(0001). By this method, we were able to construct a monolayer graphene which is confirmed by low energy electron diffraction (LEED) and angle resolved ultraviolet photoelectron spectroscopy (ARUPS). On the 3C-SiC surface, zero-layer graphene is obtained at annealing temperatures of about 1000 oC as this evident by X-ray photoelectron spectroscopy (XPS) and LEED. Similarly, carbon evaporation on the 3C-SiC surface can be applied in order to get graphene at reduced temperatures.